advanced power n-channel enhancement mode electronics corp. power mosfet fast switching characteristic bv dss 650v simple drive requirement r ds(on) 0.65 rohs compliant & halogen-free i d 7a description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w p d @t a =25 total power dissipation 3 w t stg storage temperature range t j operating junction temperature range thermal data symbol parameter value units rthj-c maximum thermal resistance, junction-case 1.5 /w rthj-a 62.5 /w data & specifications subject to change without notice parameter rating AP07S60H-A-HF 83.3 650 + 20 7 4.3 16 halogen-free product 1 201302201 2 -55 to 150 -55 to 150 maximum thermal resistance, junction-ambient (pcb mount) 3 g d s ap07s60 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s to-252(h)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 650 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =3.5a - - 0.65 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =3.5a - 6.6 - s i dss drain-source leakage current v ds =480v, v gs =0v - - 100 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =3.5a - 26 41.6 nc q gs gate-source charge v ds =480v - 3 - nc q gd gate-drain ("miller") charge v gs =10v - 12.5 - nc t d(on) turn-on delay time v dd =300v - 9 - ns t r rise time i d =3.5a - 9 - ns t d(off) turn-off delay time r g =3.3 ? -32- ns t f fall time v gs =10v - 10 - ns c iss input capacitance v gs =0v - 680 1088 pf c oss output capacitance v ds =25v - 430 - pf c rss reverse transfer capacitance f=1.0mhz - 10 - pf r g gate resistance f=1.0mhz - 4.5 9 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =3.5a, v gs =0v - 0.8 - v t rr reverse recovery time i s =3.5a, v gs =0v - 160 - ns q rr reverse recovery charge di/dt=100a/s - 1.25 - c notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP07S60H-A-HF 2 3.surface mounted on 1 in 2 copper pad of fr4 board
ap07s60h-a-h f 0.37 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 1 2 3 4 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =3.5a v g =10v 0 4 8 12 16 0 4 8 12 16 20 24 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 7.0v 6.0v v g =5.0v 0 2 4 6 8 10 0 8 16 24 32 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 8.0v 7.0v 6.0v v g =5.0v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 v sd (v) i s (a) t j = 150 o ct j = 25 o c 0 0.5 1 1.5 2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c ) normalized v gs(th) i d =250ua 500 540 580 620 660 700 740 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =3.5a t c =25 o c
ap07s60h-a-h f 0.37 fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig10. effective transient thermal impedance fig 11. maximum continuous drain fig 12. gate charge waveform current v.s. case temperature 4 0 400 800 1200 1600 2000 2400 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 12 0 8 16 24 32 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =3.5a v ds =480v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms 1s dc 0 2 4 6 8 10 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) q v g 10v q gs q gd q g charge operation in this area limited by r ds(on)
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